Showing items 1–100
Method for fabricating layer structure having target topological profile
Grant US-11961741-B2
United States of America
Solid source precursor vessel
Grant US-11959168-B2
United States of America
Atomic layer deposition of III-V compounds to form V-NAND devices
Grant US-11956977-B2
United States of America
Cyclic deposition methods for forming metal-containing material and films and structures…
Grant US-11952658-B2
United States of America
Runout and wobble measurement fixtures
Grant US-11946137-B2
United States of America
Apparatus for detecting or monitoring for a chemical precursor in a high temperature…
Grant US-11939673-B2
United States of America
Substrate processing apparatus having electrostatic chuck and substrate processing method
Grant US-11929251-B2
United States of America
Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse…
Grant US-11923190-B2
United States of America
Substrate processing apparatus for minimizing the effect of a filling gas during…
Grant US-11923181-B2
United States of America
Methods for selectively forming a target film on a substrate comprising a first…
Grant US-11915929-B2
United States of America
Method of forming an electronic structure using reforming gas, system for performing the…
Grant US-11908684-B2
United States of America
Substrate processing method and device manufactured by using the same
Grant US-11908733-B2
United States of America
Methods for forming a polycrystalline molybdenum film over a surface of a substrate and…
Grant US-11898242-B2
United States of America
Method of forming vanadium nitride-containing layer
Grant US-11898243-B2
United States of America
Method and device for depositing silicon onto substrates
Grant US-11901179-B2
United States of America
Method for selective deposition of silicon nitride layer and structure including…
Grant US-11901175-B2
United States of America
Injector configured for arrangement within a reaction chamber of a substrate processing…
Grant US-11891696-B2
United States of America
Substrate retaining apparatus, system including the apparatus, and method of using same
Grant US-11885023-B2
United States of America
Transition metal deposition method
Grant US-11885020-B2
United States of America
Method of forming vanadium nitride layer and structure including the vanadium nitride…
Grant US-11885013-B2
United States of America
Electrode for semiconductor processing apparatus
Grant US-D1012873-S1
United States of America
Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further…
Grant US-11887857-B2
United States of America
Method of depositing vanadium metal
Grant US-11873557-B2
United States of America
Lockout tagout assembly and system and method of using same
Grant US-11876356-B2
United States of America
Vertical batch furnace assembly
Grant US-11876008-B2
United States of America
Methods and materials for protection of sulfide glass solid electrolytes
Grant US-11876174-B2
United States of America
Substrate supporting unit and a substrate processing device including the same
Grant US-11866823-B2
United States of America
Detector and methods for authenticating at least one object
Grant US-11860292-B2
United States of America
Sequential infiltration synthesis apparatus and a method of forming a patterned structure
Grant US-11851755-B2
United States of America
Methods for selectively forming a silicon nitride film on a substrate and related…
Grant US-11848200-B2
United States of America
Substrate processing apparatus
Grant US-11840761-B2
United States of America
Substrate handling device with adjustable joints
Grant US-11837494-B2
United States of America
Wafer handling chamber with moisture reduction
Grant US-11837483-B2
United States of America
Method and apparatus for transmittance measurements of large articles
Grant US-11828707-B2
United States of America
Method for forming barrier layer and method for manufacturing semiconductor device
Grant US-11830738-B2
United States of America
Layer forming method and apparatus
Grant US-11830730-B2
United States of America
Method of depositing material on stepped structure
Grant US-11827981-B2
United States of America
Methods for depositing a molybdenum nitride film on a surface of a substrate by a…
Grant US-11827978-B2
United States of America
Thin film forming method
Grant US-11823866-B2
United States of America
Method for forming precoat film and method for forming silicon-containing film
Grant US-11821078-B2
United States of America
Substrate processing apparatus
Grant US-11823876-B2
United States of America
Treating sulfide glass surfaces and making solid state laminate electrode assemblies
Grant US-11817569-B2
United States of America
Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas…
Grant US-11814747-B2
United States of America
Cyclic deposition methods for forming metal-containing material and films and structures…
Grant US-11814715-B2
United States of America
Methods for forming a transition metal niobium nitride film on a substrate by atomic…
Grant US-11810788-B2
United States of America
Chemical treatment, deposition and/or infiltration apparatus and method for using the same
Grant US-11802338-B2
United States of America
Substrate processing apparatus
Grant US-11804364-B2
United States of America
Substrate processing apparatus and method
Grant US-11804388-B2
United States of America
Selective layer formation using deposition and removing
Grant US-11804373-B2
United States of America
Methods for forming a metal silicate film on a substrate in a reaction chamber and…
Grant US-11798999-B2
United States of America
Cyclical deposition method and apparatus for filling a recess formed within a substrate…
Grant US-11798834-B2
United States of America
Fast FOUP swapping with a FOUP handler
Grant US-11798830-B2
United States of America
Lithiation additive for a positive electrode
Grant US-11799083-B2
United States of America
Multiple temperature range susceptor, assembly, reactor and system including the susceptor…
Grant US-11795545-B2
United States of America
Chemical source vessel with dip tube
Grant US-11781221-B2
United States of America
Method for depositing low temperature phosphorous-doped silicon
Grant US-11781243-B2
United States of America
Methods for depositing gap filling fluids and related systems and devices
Grant US-11776846-B2
United States of America
Substrate processing device
Grant US-11767589-B2
United States of America
Methods for forming a rhenium-containing film on a substrate by a cyclical deposition…
Grant US-11769670-B2
United States of America
Storage apparatus for storing cassettes for substrates and processing apparatus equipped…
Grant US-11769682-B2
United States of America
Selective deposition method to form air gaps
Grant US-11749562-B2
United States of America
Temperature control assembly for substrate processing apparatus and method of using same
Grant US-11746414-B2
United States of America
Methods of making lithium ion conducting sulfide glass
Grant US-11749834-B2
United States of America
Multi-zone reactor, system including the reactor, and method of using the same
Grant US-11742189-B2
United States of America
Passivation against vapor deposition
Grant US-11739422-B2
United States of America
Structure including SiOCN layer and method of forming same
Grant US-11742198-B2
United States of America
Method of post-deposition treatment for silicon oxide film
Grant US-11735414-B2
United States of America
Substrate processing apparatus for processing substrates
Grant US-11735445-B2
United States of America
Method of forming a photoresist underlayer and structure including same
Grant US-11735422-B2
United States of America
Selective PEALD of oxide on dielectric
Grant US-11728164-B2
United States of America
Deposition of organic films
Grant US-11728175-B2
United States of America
Pressure transmitter for a semiconductor processing environment
Grant US-11725277-B2
United States of America
Method for forming metal silicon oxide and metal silicon oxynitride layers
Grant US-11725280-B2
United States of America
Gas distribution system and reactor system including same
Grant US-11718913-B2
United States of America
Structures including multiple carbon layers and methods of forming and using same
Grant US-11705333-B2
United States of America
Detector for optically detecting at least one object
Grant US-11698435-B2
United States of America
Methods for forming a semiconductor device structure and related semiconductor device…
Grant US-11695054-B2
United States of America
Method and apparatus for filling a gap
Grant US-11694892-B2
United States of America
Weighted lift pin
Grant US-D990534-S1
United States of America
Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition…
Grant US-11685991-B2
United States of America
Process for producing flexible organic-inorganic laminates
Grant US-11685995-B2
United States of America
Methods of forming silicon germanium structures
Grant US-11688603-B2
United States of America
Gas flow control plate
Grant US-D990441-S1
United States of America
Liquid level sensor for a chemical source vessel
Grant US-11680839-B2
United States of America
Storage device for storing wafer cassettes for use with a batch furnace
Grant US-11682572-B2
United States of America
Method for depositing molybdenum layers using an underlayer
Grant US-11674220-B2
United States of America
Method for forming silicon nitride film selectively on top/bottom portions
Grant US-11676812-B2
United States of America
Substrate processing apparatus and substrate processing method
Grant US-11664199-B2
United States of America
Substrate processing device
Grant US-11664245-B2
United States of America
Selective deposition of SiOC thin films
Grant US-11664219-B2
United States of America
Substrate support assembly and substrate processing device including the same
Grant US-11664267-B2
United States of America
Substrate processing method
Grant US-11658035-B2
United States of America
Method for forming doped metal oxide films on a substrate by cyclical deposition and…
Grant US-11658030-B2
United States of America
Vapor phase deposition of organic films
Grant US-11654454-B2
United States of America
Passivated nanoparticles
Grant US-11656231-B2
United States of America
Method of forming a device structure using selective deposition of gallium nitride and…
Grant US-11658029-B2
United States of America
Organic reactants for atomic layer deposition
Grant US-11649546-B2
United States of America
Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse…
Grant US-11646197-B2
United States of America
Structures and methods for use in photolithography
Grant US-11644758-B2
United States of America
Showing items 1–100